PIRSA:14040082

Helical edge resistance introduced by charge disorder

Glazman, L. (2014). Helical edge resistance introduced by charge disorder. Perimeter Institute. https://pirsa.org/14040082

Glazman, Leonid. Helical edge resistance introduced by charge disorder. Perimeter Institute, Apr. 29, 2014, https://pirsa.org/14040082 

          @misc{ pirsa_PIRSA:14040082,
            doi = {10.48660/14040082},
            url = {https://pirsa.org/14040082},
            author = {Glazman, Leonid},
            keywords = {Condensed Matter},
            language = {en},
            title = {Helical edge resistance introduced by charge disorder},
            publisher = {Perimeter Institute},
            year = {2014},
            month = {apr},
            note = {PIRSA:14040082 see, \url{https://pirsa.org}}
          }

Leonid Glazman Yale University

DOI 10.48660/14040082
Collection
Talk Type Scientific Series
Subject

Abstract

Electron puddles created by doping of a 2D topological insulator may violate the ideal helical edge conductance. Because of a long electron dwelling time, even a single puddle may lead to a significant inelastic backscattering. We find the resulting correction to the perfect edge conductance. Generalizing to multiple puddles, we assess the dependence of the helical edge resistance on temperature and on the doping level. Puddles with odd electron number carry a spin and lead to a logarithmically-weak temperature dependence of the resistivity of a long edge. The developed theory provides a framework for analyzing the results of the past and ongoing electron transport experiments with 2D topological insulators