APA

Pennaforti, C. (2024). Ferroelectric 2D semiconductors. Perimeter Institute. https://pirsa.org/24090198

MLA

Pennaforti, Costanza. Ferroelectric 2D semiconductors. Perimeter Institute, Sep. 13, 2024, https://pirsa.org/24090198

BibTex

@misc{ pirsa_PIRSA:24090198,
  doi = {10.48660/24090198},
  url = {https://pirsa.org/24090198},
  author = {Pennaforti, Costanza},
  keywords = {},
  language = {en},
  title = {Ferroelectric 2D semiconductors},
  publisher = {Perimeter Institute},
  year = {2024},
  month = {sep},
  note = {PIRSA:24090198 see, \url{https://pirsa.org}}
}
            

Abstract

This work investigates the ferroelectric properties of γ − In₂Se₃, a material that uniquely retains its spontaneous polarization at the nano-scale, making it resistant to depolarizing fields. With a direct band gap of 1.8 eV and the ability to switch between insulating and semiconducting phases at room temperature, γ − In₂Se₃ holds promise for next-gen memory devices, where its stable ferroelectricity could revolutionize data storage and processing.