Stacking Induced Spontaneous Polarization in Rhombohedral MoS2
APA
Ye, Z. (2022). Stacking Induced Spontaneous Polarization in Rhombohedral MoS2. Perimeter Institute. https://pirsa.org/22110064
MLA
Ye, Ziliang. Stacking Induced Spontaneous Polarization in Rhombohedral MoS2. Perimeter Institute, Nov. 14, 2022, https://pirsa.org/22110064
BibTex
@misc{ pirsa_PIRSA:22110064, doi = {10.48660/22110064}, url = {https://pirsa.org/22110064}, author = {Ye, Ziliang}, keywords = {Condensed Matter}, language = {en}, title = {Stacking Induced Spontaneous Polarization in Rhombohedral MoS2}, publisher = {Perimeter Institute}, year = {2022}, month = {nov}, note = {PIRSA:22110064 see, \url{https://pirsa.org}} }
University of British Columbia
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Abstract
"The relatively weak van der Waals bond in 2D materials has ushered in a rich new era of stacking engineering. We recently found in rhombohedrally stacked MoS2, a Berry phase contrast between layers can induce an asymmetric interlayer coupling and an out-of-plane spontaneous electrical polarization (1). The polarization direction can be switched via interlayer sliding, forming a new type of ferroelectricity. In addition, we demonstrated that such a polarization can lead to a spontaneous photovoltaic effect without any pn junctions (2). Compared to conventional PV effects, our device shows a similar quantum efficiency with an ultrafast speed and potentially a programmable polarity. The rhombohedrally stacked transition metal dichalcogenides therefore provide a new platform for studying spontaneous polarization at the atomic scale.
(1) Jing Liang, et al, arXiv:2209.06966 (2022).
(2) Dongyang Yang, et al, Nature Photonics, 16, 469–474 (2022)."