Ferroelectric 2D semiconductors
APA
Pennaforti, C. (2024). Ferroelectric 2D semiconductors. Perimeter Institute. https://pirsa.org/24090198
MLA
Pennaforti, Costanza. Ferroelectric 2D semiconductors. Perimeter Institute, Sep. 13, 2024, https://pirsa.org/24090198
BibTex
@misc{ pirsa_PIRSA:24090198, doi = {10.48660/24090198}, url = {https://pirsa.org/24090198}, author = {Pennaforti, Costanza}, keywords = {}, language = {en}, title = {Ferroelectric 2D semiconductors}, publisher = {Perimeter Institute}, year = {2024}, month = {sep}, note = {PIRSA:24090198 see, \url{https://pirsa.org}} }
Talk Type
Abstract
This work investigates the ferroelectric properties of γ − In₂Se₃, a material that uniquely retains its spontaneous polarization at the nano-scale, making it resistant to depolarizing fields. With a direct band gap of 1.8 eV and the ability to switch between insulating and semiconducting phases at room temperature, γ − In₂Se₃ holds promise for next-gen memory devices, where its stable ferroelectricity could revolutionize data storage and processing.